MRF6V12500HR3 MRF6V12500HSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic
Z11 0.161? x 1.500″
Microstrip
Z12 0.613? x 1.281″
Microstrip
Z13 0.248? x 0.865″
Microstrip
Z14 0.087? x 0.425″
Microstrip
Z15 0.309? x 0.090″
Microstrip
Z16 0.193? x 0.516″
Microstrip
Z17 0.279? x 0.080″
Microstrip
Z18 0.731? x 0.080″
Microstrip
Z19, Z21 0.507? x 0.040″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.55
Z1 0.457″
x 0.080″
Microstrip
Z2 0.250″
x 0.080″
Microstrip
Z3 0.605″
x 0.040″
Microstrip
Z4 0.080″
x 0.449″
Microstrip
Z5 0.374″
x 0.608″
Microstrip
Z6 0.118″
x 1.252″
Microstrip
Z7 0.778″
x 1.710″
Microstrip
Z8 0.095″
x 1.710″
Microstrip
Z9, Z20 0.482″
x 0.050″
Microstrip
Z10 0.138″
x 1.500″
Microstrip
Z1
RF
INPUT
C1
Z2
Z4
DUT
C2
RF
OUTPUTZ18
VBIAS
VSUPPLY
C8
C5
C12
C14
+
Z16
R3
Z3
C15
+
Z5
C7
Z15
Z14
Z13
Z12
Z11
Z10
Z8
Z7
Z6
Z9
Z19
R1
C9
Z20
Z21
Z17
C6
C16
C3
C11
C10
R2
C4
R4
C13
Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C3, C4, C5, C6
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C7, C10
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C8,C11,C13,C16
2.2
μF, 100 V Chip Capacitors
2225X7R225KT3AB
ATC
C9
22
μF, 25 V Chip Capacitor
TPSD226M025R0200
AVX
C12
1
μF, 100 V Chip Capacitor
GRM31CR72A105KA01L
Murata
C14, C15
470
μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1, R2
56
?, 1/4 W Chip Resistors
CRCW120656R0FKEA
Vishay
R3, R4
0
?, 3 A Chip Resistors
CRCW12060000Z0EA
Vishay
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6V14300HSR5
MOSFET RF N-CH 50V NI780S
MRF6V2010GNR5
MOSFET RF N-CH 10W TO-270-2
MRF6V2150NBR5
MOSFET RF N-CH 50V TO272-4
MRF6V2300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6V3090NR5
FET RF N-CH 860MHZ 50V TO270-4
MRF6V4300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6
MOSFET RF N-CH 1000W NI1230
MRF6VP121KHSR6
MOSFET RF N-CH 50V NI-1230S
相关代理商/技术参数
MRF6V12500HSR3
功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500HSR5
功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HSR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HSR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V14300HR3
功能描述:射频MOSFET电源晶体管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V14300HR3_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs